Performance of FDSOI double-gate dual-doped reconfigurable FETs
نویسندگان
چکیده
In this work, the electrical performance of a novel reprogrammable FDSOI device with dual-doping at source/drain and only two top gates is investigated through advanced 3D TCAD simulations. The static dynamic operations are evaluated compared those traditional Schottky barrier RFETs standard 28 nm MOS transistors under manufacturable geometries.
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ژورنال
عنوان ژورنال: Solid-state Electronics
سال: 2022
ISSN: ['0038-1101', '1879-2405']
DOI: https://doi.org/10.1016/j.sse.2022.108336